Infineon OptiMOS 3 Type N-Channel MOSFET, 130 A, 150 V Enhancement, 7-Pin TO-263 IPB065N15N3GATMA1

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Subtotal (1 pack of 2 units)*

MYR54.30

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Units
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Per Pack*
2 - 248MYR27.15MYR54.30
250 - 498MYR26.33MYR52.66
500 +MYR25.81MYR51.62

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Packaging Options:
RS Stock No.:
906-4283
Mfr. Part No.:
IPB065N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.45mm

Length

10.31mm

Width

4.57 mm

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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