Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-3PN TK39J60W5,S1VQ(O

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MYR17.82

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Per Unit
1 - 19MYR17.82
20 - 49MYR17.46
50 - 99MYR16.94
100 - 249MYR16.52
250 +MYR16.16

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RS Stock No.:
896-2363
Mfr. Part No.:
TK39J60W5,S1VQ(O
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

39A

Maximum Drain Source Voltage Vds

600V

Series

DTMOSIV

Package Type

TO-3PN

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

74mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

270W

Typical Gate Charge Qg @ Vgs

135nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

15.5mm

Width

4.5 mm

Height

20mm

Automotive Standard

No

COO (Country of Origin):
JP

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