Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Units	Per Unit	Per Pack**
6 - 24	MYR6.188	MYR37.128
30 - 54	MYR6.043	MYR36.258
60 - 294	MYR5.813	MYR34.878
300 - 594	MYR5.598	MYR33.588
600 +	MYR5.49	MYR32.94

Select all	Attribute	Value
	Brand	Toshiba
	Channel Type	N
	Maximum Continuous Drain Current	46 A
	Maximum Drain Source Voltage	80 V
	Package Type	TO-220SIS
	Series	TK
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	8.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Maximum Power Dissipation	35 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	37 nC @ 10 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10mm
	Width	4.5mm
	Maximum Operating Temperature	+150 °C
	Height	15mm

	Select all
	Brand Toshiba
	Channel Type N
	Maximum Continuous Drain Current 46 A
	Maximum Drain Source Voltage 80 V
	Package Type TO-220SIS
	Series TK
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 8.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Maximum Power Dissipation 35 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 37 nC @ 10 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10mm
	Width 4.5mm
	Maximum Operating Temperature +150 °C
	Height 15mm

Toshiba TK N-Channel MOSFET, 46 A, 80 V, 3-Pin TO-220SIS TK46A08N1,S4X(S

FREE delivery for orders over MYR500.00

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links