N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

RS Stock No.:: 168-7950
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

This image is representative of the product range

Subtotal (1 tube of 50 units)**

MYR398.95

25 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Tube**
50 +	MYR7.979	MYR398.95

**price indicative

RS Stock No.:: 168-7950
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

TK12E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Width	4.45mm
Transistor Material	Si
Length	10.16mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	25 nC @ 10 V
Height	15.1mm

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

FREE delivery for orders over MYR700.00

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