Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223 BSP324H6327XTSA1
- RS Stock No.:
- 826-9257
- Distrelec Article No.:
- 304-44-416
- Mfr. Part No.:
- BSP324H6327XTSA1
- Manufacturer:
- Infineon
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MYR144.20
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 200 | MYR2.884 | MYR144.20 |
| 250 - 450 | MYR2.74 | MYR137.00 |
| 500 + | MYR2.603 | MYR130.15 |
*price indicative
- RS Stock No.:
- 826-9257
- Distrelec Article No.:
- 304-44-416
- Mfr. Part No.:
- BSP324H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.54nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.54nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 400V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP324H6327XTSA1
This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching in demanding environments. It serves as a switching or control element in circuits that require an enhancement-mode device capable of handling substantial drain-source voltages and automotive-level qualification. The device is presented in a compact SOT-223 package suitable for board-mounted applications where thermal and electrical performance must be balanced.
Features and Benefits:
• 400V drain-source rating enables high-voltage switching applications
• 25Ω maximum Rds(on) reduces conduction losses in low-current circuits
• 170mA continuous drain current supports small-signal power tasks
• 1.8W maximum power dissipation manages moderate thermal loads
• 4.54nC typical gate charge allows faster gate transitions with less drive energy
• 0.8V forward voltage improves diode drop efficiency in switching events
• 25Ω maximum Rds(on) reduces conduction losses in low-current circuits
• 170mA continuous drain current supports small-signal power tasks
• 1.8W maximum power dissipation manages moderate thermal loads
• 4.54nC typical gate charge allows faster gate transitions with less drive energy
• 0.8V forward voltage improves diode drop efficiency in switching events
Applications
• Suitable for auxiliary circuits in automotive electronics
• Ideal for high-voltage control in power-supply snubber networks
• Used with gate drivers for low-current switching stages
• Can be used for load protection in sensing modules
• Appropriate for surface-mount assemblies in compact power designs
• Ideal for high-voltage control in power-supply snubber networks
• Used with gate drivers for low-current switching stages
• Can be used for load protection in sensing modules
• Appropriate for surface-mount assemblies in compact power designs
What temperature range can it operate across?
It functions across a wide ambient span from -55°C up to 150°C for use in thermally varied installations.
How many pins and what mounting style are offered?
The device comes with four pins and is intended for surface mounting on printed circuit boards.
What gate voltage limits must be observed during design?
Gate drive must be kept within ±20V to avoid exceeding the maximum gate-source rating.
What package footprint and external sizing should designers expect?
The transistor is supplied in a SOT-223 package with overall dimensions of 6.5 x 3.5 x 1.6mm for PCB layout planning.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 400 V Enhancement, 4-Pin SOT-223
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- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
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