Vishay SiHFBC30AS Type N-Channel MOSFET, 3.6 A, 600 V Enhancement, 3-Pin TO-263 SIHFBC30AS-GE3

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Subtotal (1 pack of 10 units)*

MYR83.16

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Units
Per Unit
Per Pack*
10 - 10MYR8.316MYR83.16
20 - 20MYR8.145MYR81.45
30 +MYR7.987MYR79.87

*price indicative

Packaging Options:
RS Stock No.:
815-2698
Mfr. Part No.:
SIHFBC30AS-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

600V

Series

SiHFBC30AS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

74W

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


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