Vishay SiHFBC30AS Type N-Channel MOSFET, 3.6 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

MYR274.70

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Units
Per Unit
Per Tube*
50 - 50MYR5.494MYR274.70
100 - 150MYR5.373MYR268.65
200 +MYR5.274MYR263.70

*price indicative

RS Stock No.:
165-6093
Mfr. Part No.:
SIHFBC30AS-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHFBC30AS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.2Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

74W

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


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