Vishay SiHB068N60EF Type N-Channel MOSFET, 41 A, 600 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 204-7243
- Mfr. Part No.:
- SIHB068N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR45,939.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR15.313 | MYR45,939.00 |
| 6000 - 9000 | MYR14.976 | MYR44,928.00 |
| 12000 + | MYR14.70 | MYR44,100.00 |
*price indicative
- RS Stock No.:
- 204-7243
- Mfr. Part No.:
- SIHB068N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SiHB068N60EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SiHB068N60EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Height 4.06mm | ||
Length 14.61mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Related links
- Vishay SiHB068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3
- Vishay SiHP068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay SiHP068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SIHP068N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263