N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 20)

MYR1.178

Temporarily out of stock - back order for despatch 28/01/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tape**
20 - 740	MYR1.178	MYR23.56
760 - 1480	MYR1.12	MYR22.40
1500 +	MYR1.064	MYR21.28

**price indicative

RS Stock No.:: 787-9005
Mfr. Part No.:: SI1012CR-T1-GE3
Manufacturer:: Vishay

Si1012CR, N-Channel 20V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	630 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-416 (SC-75A)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	240 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	1.3 nC @ 8 V
Width	0.86mm
Transistor Material	Si
Length	1.68mm
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

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