Vishay Si1012CR N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3

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RS Stock No.:
165-7259
Mfr. Part No.:
SI1012CR-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

630mA

Maximum Drain Source Voltage Vds

20V

Series

Si1012CR

Package Type

SC-75

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.3nC

Maximum Power Dissipation Pd

240mW

Maximum Gate Source Voltage Vgs

-8V, +8V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

800mV

Maximum Operating Temperature

150°C

Length

1.68mm

Width

860μm

Standards/Approvals

No

Height

800μm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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