Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

RS Stock No.:: 780-0655
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)

MYR3.164

Temporarily out of stock - back order for despatch 04/03/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
10 - 740	MYR3.164	MYR31.64
750 - 1490	MYR3.099	MYR30.99
1500 +	MYR3.047	MYR30.47

**price indicative

RS Stock No.:: 780-0655
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.6 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	120 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	2mm
Typical Gate Charge @ Vgs	3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Width	2mm
Transistor Material	Si
Height	0.75mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

Dual N/P-Channel MOSFET, ON Semiconductor