onsemi BUZ11 N-Channel MOSFET, 30 A, 50 V Enhancement, 3-Pin TO-220 BUZ11-NR4941
- RS Stock No.:
- 761-3515
- Mfr. Part No.:
- BUZ11-NR4941
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR32.34
FREE delivery for orders over RM 150.00
Last RS stock
- Plus 730 unit(s) shipping from 19 October 2026
- Final 70 unit(s) shipping from 26 October 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR6.468 | MYR32.34 |
| 25 - 95 | MYR6.344 | MYR31.72 |
| 100 - 245 | MYR6.22 | MYR31.10 |
| 250 - 495 | MYR6.098 | MYR30.49 |
| 500 + | MYR5.974 | MYR29.87 |
*price indicative
- RS Stock No.:
- 761-3515
- Mfr. Part No.:
- BUZ11-NR4941
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | TO-220 | |
| Series | BUZ11 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type TO-220 | ||
Series BUZ11 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 16.51mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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