- RS Stock No.:
- 761-3574
- Mfr. Part No.:
- RFD16N05LSM9A
- Manufacturer:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Pack of 5)
MYR5.158
Units | Per Unit | Per Pack* |
5 - 620 | MYR5.158 | MYR25.79 |
625 - 1245 | MYR4.90 | MYR24.50 |
1250 + | MYR4.658 | MYR23.29 |
*price indicative |
- RS Stock No.:
- 761-3574
- Mfr. Part No.:
- RFD16N05LSM9A
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 16 A |
Maximum Drain Source Voltage | 50 V |
Series | MegaFET |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 47 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 60 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -10 V, +10 V |
Width | 6.22mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Length | 6.73mm |
Typical Gate Charge @ Vgs | 80 nC @ 10 V |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 2.39mm |