Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220

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MYR3.34

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1 - 12MYR3.34
13 - 24MYR3.12
25 +MYR3.02

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Packaging Options:
RS Stock No.:
543-0002
Distrelec Article No.:
301-91-570
Mfr. Part No.:
IRF820PBF
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Series

IRF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

10.41mm

Standards/Approvals

No

Width

4.7 mm

Height

9.01mm

Automotive Standard

No

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

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