Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF

RS Stock No.:: 178-0851
Mfr. Part No.:: IRF820PBF
Manufacturer:: Vishay

Vishay IRF820 Type N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220AB IRF820PBF

This image is representative of the product range

Subtotal (1 tube of 50 units)*

MYR169.50

FREE delivery for orders over RM 150.00

In Stock

Plus 400 unit(s) shipping from 17 August 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
50 +	MYR3.39	MYR169.50

*price indicative

RS Stock No.:: 178-0851
Mfr. Part No.:: IRF820PBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	IRF820
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	50W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series IRF820
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 50W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Vishay IRF820 Series Power MOSFET, 500V Drain-Source Voltage, 50W Power Dissipation - IRF820PBF

This power MOSFET is a high-voltage switching transistor designed for through-hole mounting in power conversion and control circuits. It operates as an N-channel enhancement device intended to switch or amplify high-voltage loads within electronic systems while meeting RoHS requirements.

Features and Benefits:

• 500V drain-source rating enables high-voltage switching capability
• 50W power dissipation supports sustained power handling
• 2.5A continuous drain current allows moderate load conduction
• 3Ω maximum RDS(on) reduces conduction losses under light loads
• 24nC typical gate charge permits reasonable switching speed control
• -55°C to 150°C operating range suits wide thermal environments

Applications

• Suitable for SMPS primary-side switching stages
• Ideal for high-voltage lamp and heater controllers
• Used with discrete motor-drive front-ends for low-current motors
• Can be used for hobbyist high-voltage power supplies
• Used for laboratory bench test rigs requiring rugged through-hole parts

What package and mounting method does it use?

The device is supplied in a TO-220AB package configured for through-hole fitting with three pins for straightforward PCB attachment and heatsinking.

What gate voltage limits must be observed to avoid damage?

The gate-source voltage must not exceed 20V in either polarity to prevent gate-oxide stress and potential failure.

How does the forward voltage specification affect its use in circuits?

The specified forward voltage of 1.6V indicates the typical voltage drop when conducting under specified test conditions and should be accounted for in thermal and efficiency calculations.

Is this component suitable for automotive temperature extremes?

While it tolerates -55°C to 150°C, it is not designated to meet automotive-standard qualifications.