Vishay SI Type N-Channel MOSFET, 5 A, 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- RS Stock No.:
- 279-9898
- Mfr. Part No.:
- SI4848BDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR29.50
FREE delivery for orders over RM 500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | MYR2.95 | MYR29.50 |
| 50 - 90 | MYR2.205 | MYR22.05 |
| 100 - 240 | MYR1.956 | MYR19.56 |
| 250 - 990 | MYR1.912 | MYR19.12 |
| 1000 + | MYR1.868 | MYR18.68 |
*price indicative
- RS Stock No.:
- 279-9898
- Mfr. Part No.:
- SI4848BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | SI | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.089Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 4.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series SI | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.089Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 4.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SI Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- Vishay Si4848DY Type N-Channel MOSFET 150 V Enhancement, 8-Pin SOIC SI4848DY-T1-GE3
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay SISS Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3