Vishay SI N-Channel MOSFET, 5 A, 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- RS Stock No.:
- 279-9896
- Mfr. Part No.:
- SI4848BDY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
Sorry, we don't know when this will be back in stock.
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (In a Pack of 10)
MYR29.50
- RS Stock No.:
- 279-9896
- Mfr. Part No.:
- SI4848BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SI | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.089Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4.5W | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SI | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.089Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4.5W | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SI N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- Vishay SI N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- Vishay SI N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Vishay SI N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SI2392BDS-T1-GE3
- Vishay SI N-Channel Single MOSFETs 30 V Enhancement Mode, 8-Pin TSOP-6 SI7804BDN-T1-GE3
- Vishay SI N-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- Vishay SI N-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin TSOP-6 SI3410BDV-T1-GE3
- Vishay SI N-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3