Infineon OptiMOS-T2 N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1
- RS Stock No.:
- 273-2628
- Mfr. Part No.:
- BSC076N04NDATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR38.90
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In Stock
- 85 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | MYR7.78 | MYR38.90 |
| 50 - 495 | MYR7.072 | MYR35.36 |
| 500 - 995 | MYR5.548 | MYR27.74 |
| 1000 - 2495 | MYR5.43 | MYR27.15 |
| 2500 + | MYR5.332 | MYR26.66 |
*price indicative
- RS Stock No.:
- 273-2628
- Mfr. Part No.:
- BSC076N04NDATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON-8-4 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON-8-4 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for drives applications and it is 100 percent avalanche tested. It is qualified for industrial applications according to the relevant tests of JEDEC47 20 2.
Halogen free
RoHS compliant
Pb free lead plating
Fast switching MOSFETs
Superior thermal resistance
Related links
- Infineon OptiMOS-T2 N-Channel Power MOSFET 40 V Enhancement, 8-Pin TDSON-8-4 BSC076N04NDATMA1
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- Infineon OptiMOS-T2 N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1
- Infineon OptiMOS-T2 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1
