ROHM RX3G18BBG Type N-Channel MOSFET, 270 A, 40 V Enhancement, 3-Pin TO-220 RX3G18BBGC16
- RS Stock No.:
- 266-3862
- Mfr. Part No.:
- RX3G18BBGC16
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
MYR32.23
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 49 | MYR32.23 |
| 50 - 99 | MYR29.14 |
| 100 - 249 | MYR24.13 |
| 250 - 499 | MYR23.67 |
| 500 + | MYR21.03 |
*price indicative
- RS Stock No.:
- 266-3862
- Mfr. Part No.:
- RX3G18BBGC16
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | RX3G18BBG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 210nC | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series RX3G18BBG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 210nC | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power package, suitable for switching.
Pb free plating
RoHS compliant
Halogen free
Related links
- ROHM RX3G18BBG Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- ROHM RX3G18BBG Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 RX3L07BBGC16
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3006PBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263 AUIRF2804STRL
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-262 IRF2804STRLPBF