Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF

RS Stock No.:: 124-9025
Mfr. Part No.:: IRLB3036PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF

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Bulk discount available

Subtotal (1 tube of 50 units)*

MYR649.80

FREE delivery for orders over RM 500.00

In Stock

550 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
50 - 50	MYR12.996	MYR649.80
100 - 150	MYR12.796	MYR639.80
200 +	MYR12.546	MYR627.30

*price indicative

RS Stock No.:: 124-9025
Mfr. Part No.:: IRLB3036PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	270A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	91nC
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	380W
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Standards/Approvals	No
	Length	10.67mm
	Height	9.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 270A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 91nC
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 380W
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Standards/Approvals No
	Length 10.67mm
	Height 9.02mm
	Automotive Standard No

COO (Country of Origin):: MX

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