Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

MYR10,032.00

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Units
Per Unit
Per Reel*
4000 +MYR2.508MYR10,032.00

*price indicative

RS Stock No.:
262-6732
Mfr. Part No.:
IRF7451TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

4 mm

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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