Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS Stock No.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR13.96
FREE delivery for orders over RM 500.00
In Stock
- Plus 4,580 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR6.98 | MYR13.96 |
| 10 - 98 | MYR6.635 | MYR13.27 |
| 100 - 248 | MYR6.235 | MYR12.47 |
| 250 - 498 | MYR5.80 | MYR11.60 |
| 500 + | MYR5.335 | MYR10.67 |
*price indicative
- RS Stock No.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD85P04P4L06ATMA2
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2