Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- RS Stock No.:
- 258-3868
- Mfr. Part No.:
- IPD90P04P405ATMA2
- Manufacturer:
- Infineon
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MYR11,165.00
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In Stock
- 2,500 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | MYR4.466 | MYR11,165.00 |
| 5000 - 5000 | MYR4.332 | MYR10,830.00 |
| 7500 + | MYR4.159 | MYR10,397.50 |
*price indicative
- RS Stock No.:
- 258-3868
- Mfr. Part No.:
- IPD90P04P405ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain-Source Voltage, 125W Maximum Power Dissipation - IPD90P04P405ATMA2
This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in demanding environments. It operates across a wide temperature span and is suitable for high-current applications where low on-resistance and robust gate handling are required. The device meets automotive reliability standards and environmental directives for use in regulated sectors.
Features and Benefits:
• 4.7mΩ Rds(on) reduces conduction losses and improves efficiency
• 90A continuous drain current supports high-current switching loads
• 118nC typical gate charge enables predictable switching performance
• 20V maximum gate-source tolerance allows flexible gate drive margins
• 125W power dissipation manages high power in Compact assemblies
• 90A continuous drain current supports high-current switching loads
• 118nC typical gate charge enables predictable switching performance
• 20V maximum gate-source tolerance allows flexible gate drive margins
• 125W power dissipation manages high power in Compact assemblies
Applications
• Suitable for high-current DC power distribution stages
• Ideal for automotive power modules under AEC‑Q101 requirements
• Used with Compact heatsinking in surface-mount power designs
• Can be used for synchronous switching in power converters
• Ideal for automotive power modules under AEC‑Q101 requirements
• Used with Compact heatsinking in surface-mount power designs
• Can be used for synchronous switching in power converters
What temperature range can it withstand in operation?
It operates from -55°C up to 175°C, allowing use in wide thermal environments.
How does package choice affect assembly?
The TO-252 package facilitates surface-mount placement and thermal conduction to PCB landings.
What standards and directives has it met?
It conforms to DIN IEC 68-1 and is RoHS compliant as indicated in the specifications.
What channel characteristics determine switching behaviour?
The device is P-type enhancement mode, which defines polarity and gate-driven conduction behaviour.
Related links
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