onsemi NTB N-Channel MOSFET, 58 A, 1.2 kV Enhancement, 7-Pin TO-263 NTBG060N065SC1
- RS Stock No.:
- 254-7664
- Mfr. Part No.:
- NTBG060N065SC1
- Manufacturer:
- onsemi
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View bulk pricing optionsSubtotal (1 reel of 800 units)*
MYR26,312.80
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Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | MYR32.891 | MYR26,312.80 |
| 1600 - 1600 | MYR32.233 | MYR25,786.40 |
| 2400 + | MYR31.589 | MYR25,271.20 |
*price indicative
- RS Stock No.:
- 254-7664
- Mfr. Part No.:
- NTBG060N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 117W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 117W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Higher system reliability
Ultra low gate charge
High speed switching and low capacitance
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