onsemi NTH N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTH4L025N065SC1
- RS Stock No.:
- 254-7669
- Mfr. Part No.:
- NTH4L025N065SC1
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (450 units, in tubes of 450)*
MYR33,777.00
FREE delivery for orders over RM 150.00
Temporarily out of stock
- Shipping from 13 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 450 - 450 | MYR75.06 | MYR33,777.00 |
| 900 - 900 | MYR73.559 | MYR33,101.55 |
| 1350 + | MYR72.088 | MYR32,439.60 |
*price indicative
- RS Stock No.:
- 254-7669
- Mfr. Part No.:
- NTH4L025N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 164nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 164nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
Ultra low gate charge
High speed switching and low capacitance