Infineon BSD235C 2 Type N, Type P-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SOT-363 BSD235CH6327XTSA1
- RS Stock No.:
- 250-0523
- Mfr. Part No.:
- BSD235CH6327XTSA1
- Manufacturer:
- Infineon
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MYR9.33
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | MYR0.933 | MYR9.33 |
| 20 - 90 | MYR0.839 | MYR8.39 |
| 100 - 240 | MYR0.755 | MYR7.55 |
| 250 - 490 | MYR0.68 | MYR6.80 |
| 500 + | MYR0.612 | MYR6.12 |
*price indicative
- RS Stock No.:
- 250-0523
- Mfr. Part No.:
- BSD235CH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | BSD235C | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 1.20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series BSD235C | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 1.20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon BSD235C Series MOSFET, 20V Maximum Drain-Source Voltage, 0.95A Maximum Continuous Drain Current - BSD235CH6327XTSA1
This MOSFET is a dual enhancement‑mode transistor designed for compact, automotive‑grade applications. It integrates both N‑channel and P‑channel elements on a single chip within a 6‑pin SOT‑363 package, enabling small‑footprint switching and signal tasks. The device is specified to operate across a wide temperature span appropriate for demanding environments and conforms to environmental material restrictions.
Features and Benefits:
• 20V maximum drain source voltage enables low‑voltage switching capability
• 0.95A continuous drain current supports moderate current loads
• 1.2V gate‑source rating allows low‑voltage gate drive operation
• 0.5W power dissipation permits Compact thermal budgeting
• 150°C maximum operating temperature allows elevated ambient use
• 0.95A continuous drain current supports moderate current loads
• 1.2V gate‑source rating allows low‑voltage gate drive operation
• 0.5W power dissipation permits Compact thermal budgeting
• 150°C maximum operating temperature allows elevated ambient use
Applications
• Suitable for automotive load switching in restricted spaces
• Ideal for complementary push‑pull signal stages
• Used with low‑voltage control logic for gate driving
• Can be used for redundant dual‑element power management
• Used for Compact board designs requiring RoHS compliance
• Ideal for complementary push‑pull signal stages
• Used with low‑voltage control logic for gate driving
• Can be used for redundant dual‑element power management
• Used for Compact board designs requiring RoHS compliance
How many transistor elements are integrated on the chip?
It contains two elements, one N‑channel and one P‑channel.
What pin count and package should I plan for in PCB layout?
The device uses a 6‑pin SOT‑363 footprint for surface mounting.
What temperature extremes can it withstand during operation?
The permitted operating range extends from -55°C up to 150°C.
Is the device suitable where material restrictions apply?
It meets RoHS material requirements and is designed accordingly.
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