Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

RS Stock No.:: 165-5872
Mfr. Part No.:: BSD235NH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

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Bulk discount available

Subtotal (1 reel of 3000 units)**

MYR1,293.00

6000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR500.00

Real time qty checker

Units	Per Unit	Per Reel**
3000 - 3000	MYR0.431	MYR1,293.00
6000 - 9000	MYR0.422	MYR1,266.00
12000 +	MYR0.414	MYR1,242.00

**price indicative

RS Stock No.:: 165-5872
Mfr. Part No.:: BSD235NH6327XTSA1
Manufacturer:: Infineon

BSD235N OptiMOS2 Small Signal Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	950 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Series	OptiMOS™ 2
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	600 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Minimum Gate Threshold Voltage	0.7V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Length	2mm
Width	1.25mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	0.32 nC @ 4.5 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	0.8mm
Minimum Operating Temperature	-55 °C

Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

FREE delivery for orders over MYR500.00

Infineon OptiMOS™2 Power MOSFET Family

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