Infineon ISP Type P-Channel MOSFET, 3.7 A, 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1

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Subtotal (1 pack of 2 units)*

MYR13.79

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Units
Per Unit
Per Pack*
2 - 8MYR6.895MYR13.79
10 - 98MYR6.545MYR13.09
100 - 248MYR6.215MYR12.43
250 - 498MYR5.915MYR11.83
500 +MYR5.61MYR11.22

*price indicative

Packaging Options:
RS Stock No.:
243-9277
Mfr. Part No.:
ISP650P06NMXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

60V

Series

ISP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -3.7A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness

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