Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

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Subtotal (1 pack of 5 units)*

MYR20.82

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Units
Per Unit
Per Pack*
5 - 45MYR4.164MYR20.82
50 - 95MYR3.854MYR19.27
100 - 245MYR3.568MYR17.84
250 - 995MYR3.302MYR16.51
1000 +MYR3.056MYR15.28

*price indicative

Packaging Options:
RS Stock No.:
228-2887
Mfr. Part No.:
SiJ450DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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