Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR19.38

Add to Basket
Select or type quantity
In Stock
  • 5,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 45MYR3.876MYR19.38
50 - 95MYR3.588MYR17.94
100 - 245MYR3.322MYR16.61
250 - 995MYR3.074MYR15.37
1000 +MYR2.844MYR14.22

*price indicative

Packaging Options:
RS Stock No.:
228-2887
Mfr. Part No.:
SiJ450DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

Related links