Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8 SIJ150DP-T1-GE3
- RS Stock No.:
- 200-6841
- Mfr. Part No.:
- SIJ150DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR8,727.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 13 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR2.909 | MYR8,727.00 |
| 6000 - 9000 | MYR2.845 | MYR8,535.00 |
| 12000 + | MYR2.793 | MYR8,379.00 |
*price indicative
- RS Stock No.:
- 200-6841
- Mfr. Part No.:
- SIJ150DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Series | TrenchFET Gen IV | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 0.98 mm | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 45V | ||
Series TrenchFET Gen IV | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 0.98 mm | ||
Height 3.4mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.
TrenchFET Gen IV power MOSFET
Very low Qg and Qoss reduce power loss and improve efficiency
Flexible leads provide resilience to mechanical stress
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching characteristics
Related links
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3