Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

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Subtotal (1 pack of 5 units)*

MYR35.15

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Units
Per Unit
Per Pack*
5 - 45MYR7.03MYR35.15
50 - 95MYR6.824MYR34.12
100 - 245MYR6.622MYR33.11
250 - 995MYR6.424MYR32.12
1000 +MYR6.236MYR31.18

*price indicative

Packaging Options:
RS Stock No.:
228-2899
Mfr. Part No.:
SiR450DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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