Infineon BSS127I Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS127IXTSA1
- RS Stock No.:
- 225-0559
- Mfr. Part No.:
- BSS127IXTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
MYR38.40
FREE delivery for orders over RM 500.00
In Stock
- 1,600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 100 | MYR0.384 | MYR38.40 |
| 200 - 200 | MYR0.352 | MYR35.20 |
| 300 - 300 | MYR0.325 | MYR32.50 |
| 400 - 400 | MYR0.302 | MYR30.20 |
| 500 + | MYR0.294 | MYR29.40 |
*price indicative
- RS Stock No.:
- 225-0559
- Mfr. Part No.:
- BSS127IXTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-23 | |
| Series | BSS127I | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 0.65nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-23 | ||
Series BSS127I | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 0.65nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSS127I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
Related links
- Infineon BSS127I Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS® Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23
- Infineon BSP135I Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135IXTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1