Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK
- RS Stock No.:
- 222-4906
- Mfr. Part No.:
- IPL60R060CFD7AUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
MYR57,999.00
FREE delivery for orders over RM 150.00
Temporarily out of stock
- Shipping from 02 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR19.333 | MYR57,999.00 |
| 6000 - 6000 | MYR18.589 | MYR55,767.00 |
| 9000 + | MYR18.354 | MYR55,062.00 |
*price indicative
- RS Stock No.:
- 222-4906
- Mfr. Part No.:
- IPL60R060CFD7AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Power Dissipation Pd | 219W | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Power Dissipation Pd 219W | ||
Maximum Operating Temperature 150°C | ||
Width 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Related links
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R060CFD7AUMA1
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK IPL60R065C7AUMA1
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK
- Infineon IPL60R Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin ThinPAK
- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin ThinPAK