Infineon IPD50R N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1
- RS Stock No.:
- 222-4902
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR68.50
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- Plus 1,485 unit(s) shipping from 21 September 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR13.70 | MYR68.50 |
| 10 - 95 | MYR12.556 | MYR62.78 |
| 100 - 245 | MYR11.592 | MYR57.96 |
| 250 - 495 | MYR10.766 | MYR53.83 |
| 500 + | MYR10.472 | MYR52.36 |
*price indicative
- RS Stock No.:
- 222-4902
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | IPD50R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series IPD50R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies