Infineon IPD50R Type N-Channel MOSFET, 13 A, 600 V Enhancement, 10-Pin TO-252 IPDD60R190G7XTMA1

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Subtotal (1 pack of 5 units)*

MYR60.42

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  • 1,350 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5MYR12.084MYR60.42
10 - 95MYR11.084MYR55.42
100 - 245MYR10.216MYR51.08
250 - 495MYR9.502MYR47.51
500 +MYR9.232MYR46.16

*price indicative

Packaging Options:
RS Stock No.:
222-4904
Mfr. Part No.:
IPDD60R190G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD50R

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

76W

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

150°C

Width

2.35 mm

Standards/Approvals

No

Height

21.11mm

Length

6.6mm

Automotive Standard

No

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