Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO BSO604NS2XUMA1
- RS Stock No.:
- 222-4625
- Mfr. Part No.:
- BSO604NS2XUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR70.97
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 4,990 unit(s) shipping from 07 January 2027
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | MYR7.097 | MYR70.97 |
| 20 - 90 | MYR6.506 | MYR65.06 |
| 100 - 240 | MYR6.006 | MYR60.06 |
| 250 - 490 | MYR5.578 | MYR55.78 |
| 500 + | MYR5.426 | MYR54.26 |
*price indicative
- RS Stock No.:
- 222-4625
- Mfr. Part No.:
- BSO604NS2XUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | DSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19.7nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.9mm | |
| Standards/Approvals | No | |
| Width | 3.94 mm | |
| Height | 1.47mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type DSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19.7nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 4.9mm | ||
Standards/Approvals No | ||
Width 3.94 mm | ||
Height 1.47mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Logic level
Enhancement Mode Green Product (RoHS compliant)
AEC Qualified
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