Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 223-8521
- Mfr. Part No.:
- IPG20N06S4L26AATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
MYR12,400.00
FREE delivery for orders over RM 500.00
In Stock
- Plus 20,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | MYR2.48 | MYR12,400.00 |
| 10000 - 10000 | MYR2.384 | MYR11,920.00 |
| 15000 + | MYR2.354 | MYR11,770.00 |
*price indicative
- RS Stock No.:
- 223-8521
- Mfr. Part No.:
- IPG20N06S4L26AATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.3V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.3V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Related links
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