Infineon IPL Type N-Channel MOSFET, 300 A, 40 V Enhancement, 8-Pin HSOF IPLU300N04S41R1XTMA1
- RS Stock No.:
- 214-9081
- Mfr. Part No.:
- IPLU300N04S41R1XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR81.24
FREE delivery for orders over RM 500.00
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR16.248 | MYR81.24 |
| 10 - 95 | MYR14.88 | MYR74.40 |
| 100 - 245 | MYR13.738 | MYR68.69 |
| 250 - 495 | MYR12.762 | MYR63.81 |
| 500 + | MYR12.404 | MYR62.02 |
*price indicative
- RS Stock No.:
- 214-9081
- Mfr. Part No.:
- IPLU300N04S41R1XTMA1
- Manufacturer:
- Infineon
Specifications
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOF | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Width | 10.58 mm | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOF | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Width 10.58 mm | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon IPL Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOF
- Infineon IAUT Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon IAUT Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1