N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1

RS Stock No.:: 178-7450
Mfr. Part No.:: IPT020N10N3ATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1

This image is representative of the product range

3988 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (On a Reel of 2000)

MYR26.42

Units	Per Unit	Per Reel*
2000 +	MYR26.42	MYR52,840.00

*price indicative

RS Stock No.:: 178-7450
Mfr. Part No.:: IPT020N10N3ATMA1
Manufacturer:: Infineon

IPT020N10N3 OptiMOS 3 Power-Transistor, 100 V

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	300 A
Maximum Drain Source Voltage	100 V
Package Type	HSOF-8
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.7 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	10.1mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	156 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.58mm
Forward Diode Voltage	1V
Height	2.4mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over