Toshiba TK090A65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-220 TK090A65Z,S4X(S
- RS Stock No.:
- 206-9723
- Mfr. Part No.:
- TK090A65Z,S4X(S
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
MYR1,288.10
FREE delivery for orders over RM 500.00
In Stock
- Plus 50 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR25.762 | MYR1,288.10 |
| 100 - 150 | MYR25.195 | MYR1,259.75 |
| 200 + | MYR24.731 | MYR1,236.55 |
*price indicative
- RS Stock No.:
- 206-9723
- Mfr. Part No.:
- TK090A65Z,S4X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TK090A65Z | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.7mm | |
| Width | 10 mm | |
| Length | 28mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TK090A65Z | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.7mm | ||
Width 10 mm | ||
Length 28mm | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.075 ?
Storage temperature -55 to 150°C
Related links
- Toshiba TK090A65Z Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
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