Vishay Dual SiSF06DN 2 Type N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)*

MYR86.46

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 06 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
20 - 740MYR4.323MYR86.46
760 - 1480MYR4.107MYR82.14
1500 +MYR3.90MYR78.00

*price indicative

Packaging Options:
RS Stock No.:
204-7260
Mfr. Part No.:
SISF06DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

101A

Maximum Drain Source Voltage Vds

30V

Series

SiSF06DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

69.4W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Height

0.73mm

Standards/Approvals

No

Length

3.3mm

Width

3.3 mm

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.

Very low source-to-source on resistance

TrenchFET Gen IV power MOSFET

Related links