Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET, 52 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 188-4891
- Mfr. Part No.:
- SiSF20DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR13,158.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 16 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR4.386 | MYR13,158.00 |
| 6000 - 9000 | MYR4.289 | MYR12,867.00 |
| 12000 + | MYR4.21 | MYR12,630.00 |
*price indicative
- RS Stock No.:
- 188-4891
- Mfr. Part No.:
- SiSF20DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69.4W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Common Drain | |
| Maximum Operating Temperature | -55°C | |
| Width | 3.4 mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69.4W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Common Drain | ||
Maximum Operating Temperature -55°C | ||
Width 3.4 mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
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