Vishay SiHP052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 SIHP052N60EF-GE3

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Subtotal (1 pack of 5 units)*

MYR117.28

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Units
Per Unit
Per Pack*
5 - 245MYR23.456MYR117.28
250 - 495MYR22.284MYR111.42
500 +MYR21.17MYR105.85

*price indicative

Packaging Options:
RS Stock No.:
204-7211
Mfr. Part No.:
SIHP052N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SiHP052N60EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

101nC

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

14.4mm

Length

10.52mm

Width

4.65 mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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