Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 214-4413
- Mfr. Part No.:
- IPP60R060P7XKSA1
- Manufacturer:
- Infineon
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MYR755.75
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR15.115 | MYR755.75 |
| 100 - 150 | MYR14.782 | MYR739.10 |
| 200 + | MYR14.51 | MYR725.50 |
*price indicative
- RS Stock No.:
- 214-4413
- Mfr. Part No.:
- IPP60R060P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 164W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 164W | ||
Maximum Operating Temperature 150°C | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 4.4mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - IPP60R060P7XKSA1
This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching applications. It operates across a wide temperature span and is intended for through-hole mounting in a TO-220 format, providing a compact, serviceable option for engineers needing a robust device for high-voltage circuits.
Features and Benefits:
• 600V rating enabling high-voltage switching applications
• 48A continuous drain current supporting heavy load handling
• 164W maximum power dissipation for high-power operation
• 60 mΩ maximum RDS(on) delivering low conduction losses
• 67 nC typical gate charge allowing predictable drive requirements
• 20V maximum gate-source voltage accommodating standard gate drivers
• 48A continuous drain current supporting heavy load handling
• 164W maximum power dissipation for high-power operation
• 60 mΩ maximum RDS(on) delivering low conduction losses
• 67 nC typical gate charge allowing predictable drive requirements
• 20V maximum gate-source voltage accommodating standard gate drivers
Applications
• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter stages
• Used with high-voltage battery management systems
• Can be used for power-factor correction pre-regulators
• Useful in LED lighting mains-supply conversion
• Ideal for industrial motor-drive inverter stages
• Used with high-voltage battery management systems
• Can be used for power-factor correction pre-regulators
• Useful in LED lighting mains-supply conversion
What thermal range can it tolerate during operation?
It is specified to operate from -55 °C up to 150 °C, covering harsh ambient and elevated junction conditions for demanding environments.
What package and mounting method are provided for board assembly?
It is supplied in a TO-220 package designed for through-hole installation, facilitating heatsinking and straightforward soldered mounting.
How does the device’s gate drive requirement affect driver selection?
With a typical gate charge of 67 nC and a 20V VGS limit, choose a driver capable of sourcing and sinking sufficient current while not exceeding the gate-voltage limit.
Which conduction and switching characteristics influence efficiency?
The maximum drain-source resistance of 60 mΩ and forward voltage of 0.9V indicate its conduction losses and forward drop characteristics under load, relevant when calculating system efficiency.
Related links
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R060P7XKSA1
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
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