Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 200-6829
- Mfr. Part No.:
- SIHD690N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR137.55
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 23 October 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 725 | MYR5.502 | MYR137.55 |
| 750 - 1475 | MYR5.001 | MYR125.03 |
| 1500 + | MYR4.585 | MYR114.63 |
*price indicative
- RS Stock No.:
- 200-6829
- Mfr. Part No.:
- SIHD690N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 62.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHD690N60E-GE3 is a E Series power MOSFET.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
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