Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

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Subtotal (1 pack of 2 units)*

MYR41.53

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Per Pack*
2 - 8MYR20.765MYR41.53
10 - 24MYR20.145MYR40.29
26 - 98MYR19.34MYR38.68
100 - 498MYR18.375MYR36.75
500 +MYR17.275MYR34.55

*price indicative

Packaging Options:
RS Stock No.:
228-2864
Mfr. Part No.:
SiHG080N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

227W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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