Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3

RS Stock No.:: 200-6819
Mfr. Part No.:: SIHP186N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220AB SIHP186N60EF-GE3

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Subtotal (1 pack of 10 units)*

MYR129.68

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Units	Per Unit	Per Pack*
10 +	MYR12.968	MYR129.68

*price indicative

RS Stock No.:: 200-6819
Mfr. Part No.:: SIHP186N60EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	193mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	156W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	14.4mm
	Width	4.65mm
	Length	10.52mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 193mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 156W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 14.4mm
	Width 4.65mm
	Length 10.52mm
	Automotive Standard No

Document- SIHP186N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 18A Drain Current - SIHP186N60EF-GE3

This power MOSFET is a high-voltage switching device designed for demanding power-electronic roles in industrial systems. It functions as an N-channel enhancement-mode transistor for control of high-voltage DC loads and switching stages, intended for through-hole mounting in equipment where robust conduction and thermal handling are required.

Features and Benefits:

• 650V maximum drain voltage enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 193mΩ RDS(on) reduces conduction losses during operation
• 32nC typical gate charge enables predictable switching performance
• 156W maximum power dissipation aids thermal design choices
• 30V gate tolerance allows flexible drive voltage ranges

Applications

• Suitable for high-voltage inverter front ends in industrial drives
• Ideal for switch-mode power supplies handling elevated DC bus voltages
• Used for discrete power stages in automation and motor-control units
• Can be used for load-switching in power distribution modules

What operating temperature range can it withstand?

It operates from -55°C to 150°C, enabling use across varied thermal environments and elevated-temperature applications.

How is the device intended to be mounted in equipment?

It is supplied in a through-hole TO-220AB package with three pins suitable for secure board mounting and straightforward heatsinking options.

What is the expected gate drive characteristic for switching design?

With a typical gate charge of 32nC at rated conditions, designers can estimate gate-drive energy and choose appropriate drivers for target switching speeds.

What mechanical footprint considerations should be noted?

The package presents Compact external dimensions with a moderate profile, facilitating integration where vertical clearance and board retention are factors.