Vishay EF Type N-Channel Single MOSFETs, 8 A, 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3

N

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Subtotal (1 tube of 25 units)*

MYR295.775

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Units
Per Unit
Per Tube*
25 - 100MYR11.831MYR295.78
125 +MYR11.594MYR289.85

*price indicative

RS Stock No.:
653-136
Mfr. Part No.:
SIHG11N80AEF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

EF

Package Type

TO-247AC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.483Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

16.25mm

Width

20.70 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay Power MOSFET designed for high-voltage switching applications. It features a fast body diode, low figure-of-merit (FOM), and reduced effective capacitance for improved efficiency. Ideal for server, telecom, SMPS, and power factor correction supplies, it comes in a robust TO-247AC package.

Pb Free

Halogen free

RoHS compliant

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