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    P-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-8SH Vishay SiSH101DN-T1-GE3

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    Subtotal (1 pack of 25 units)**

    MYR49.15

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    Per Pack**
    25 - 725MYR1.966MYR49.15
    750 - 1475MYR1.898MYR47.45
    1500 +MYR1.803MYR45.075

    **price indicative

    Packaging Options:
    RS Stock No.:
    188-5039
    Mfr. Part No.:
    SiSH101DN-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    P

    Maximum Continuous Drain Current

    35 A

    Maximum Drain Source Voltage

    30 V

    Package Type

    PowerPAK 1212-8SH

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    13 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.5V

    Minimum Gate Threshold Voltage

    1.2V

    Maximum Power Dissipation

    52 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    ±25 V

    Maximum Operating Temperature

    +150 °C

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    68 nC @ 15 V

    Length

    3.3mm

    Width

    3.3mm

    Height

    0.93mm

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    1.2V

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