Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 60 V Enhancement, 8-Pin HSOF
- RS Stock No.:
- 178-7451
- Mfr. Part No.:
- IPT007N06NATMA1
- Manufacturer:
- Infineon
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MYR42,500.00
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- 2,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | MYR21.25 | MYR42,500.00 |
| 4000 - 6000 | MYR20.782 | MYR41,564.00 |
| 8000 + | MYR20.40 | MYR40,800.00 |
*price indicative
- RS Stock No.:
- 178-7451
- Mfr. Part No.:
- IPT007N06NATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 216nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 216nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT007N06NATMA1
This MOSFET is a high-current N-channel enhancement device designed for power switching in demanding electronic systems. It operates across a wide temperature range suitable for harsh environments and is supplied in a surface-mount HSOF package to support compact board layouts and efficient thermal management.
Features and Benefits:
• 60V drain rating enabling medium-voltage power designs
• 300A continuous current handling for heavy-load switching
• 1mΩ Rds(on) reducing conduction losses in high-current paths
• 375W power dissipation allowing sustained high-power operation
• 216nC typical gate charge for predictable gate-drive requirements
• ±20V gate tolerance supporting robust gate-drive transients
• 300A continuous current handling for heavy-load switching
• 1mΩ Rds(on) reducing conduction losses in high-current paths
• 375W power dissipation allowing sustained high-power operation
• 216nC typical gate charge for predictable gate-drive requirements
• ±20V gate tolerance supporting robust gate-drive transients
Applications
• Suitable for server and data centre power conversion stages
• Ideal for motor-drive inverter output stages
• Used for high-current synchronous rectification in PSUs
• Can be used for DC-DC converters in telecoms equipment
• Suitable for industrial power management and drives
• Ideal for motor-drive inverter output stages
• Used for high-current synchronous rectification in PSUs
• Can be used for DC-DC converters in telecoms equipment
• Suitable for industrial power management and drives
What thermal limits should designers consider for continuous operation?
The device is rated to dissipate up to 375W
designers must ensure adequate PCB copper, thermal vias, or heatsinking to keep junction temperature within acceptable bounds given system power loss.
How does gate-charge impact drive circuitry selection?
With a typical gate charge of 216nC, gate drivers must supply sufficient peak current and switching speed to achieve desired transition times while managing switching losses and EMI.
What are the device’s mechanical mounting and pin-count details?
It is supplied in an HSOF surface-mount package with eight pins, enabling low-inductance board-level connections for high-current paths.
What operating temperature range can be expected in system design?
The component is specified to operate from -55°C up to 175°C, permitting use in thermally challenging environments when appropriate thermal design practices are applied.
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
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